IEEE Electron Device Letters · 2006 · 12 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportDevice ScalingDopingMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Thin FilmsShort-channel EffectsCarrier Mobility ExtractionChannel DopingChannel Length ScalingElectron MobilityFully Depleted Silicon-on-insulator TransistorsMobility EnhancementMobility ExtractionSilicon-on-insulator Technology
The effect of longitudinal uniaxial mechanical stress on electron mobility in high-performance fully depleted ultrathin silicon-on-insulator nFETs with a raised source/drain (RSD) architecture and channel lengths ranging from 1 μm (long channel) to 30 nm (deeply scaled) is reported. Longitudinal uniaxial stress in the channel was achieved using a stressed nitride contact liner technique. A dR/dL method was used to minimize errors in the mobility extraction due to uncertainties in external resistance and channel length. Significant mobility enhancement of 1.6-1.8 times was achieved despite the use of an RSD and strong channel doping of roughly 5×10/sup 18/ cm/sup -3/, required for short-channel effect control.
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A Logic Nanotechnology Featuring Strained-Silicon
Scott E. Thompson, M Armstrong, C. Auth et al. · IEEE Electron Device Letters · 2004 · 513 citations