L. Black

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

P. Agnello, T. Ivers, C. Warm et al. · 2006 · 115 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

W.-H. Lee, Anya M. Waite, H. Nii et al. · 2006 · 55 citations

Engineering, Computer Engineering, Electrical Engineering +17

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper

B. Greene, Qingqing Liang, K. Amarnath et al. · Symposium on VLSI Technology · 2006 · 40 citations

Engineering, Computer Engineering, Electrical Engineering +15

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

B. Frank Yang, R. Takalkar, Zhibin Ren et al. · 2008 · 24 citations

Engineering, Electrical Engineering, Materials Science +12

Dual stress liner enhancement in hybrid orientation technology

C. Sheraw, Min Yang, David Fried et al. · 2005 · 23 citations

Engineering, Electrical Engineering, Materials Science +12