Concepedia

High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor

B. Frank Yang, R. Takalkar, Zhibin Ren, L. Black, Abhishek Dube, J.W. Weijtmans, J. Li, J. Johnson, J. Faltermeier, Anita Madan,

2008 · 24 citations · 0 references

DOI

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSilicon MaterialsPhosphorus-doped Amorphous SiliconScalabilitySource-drain Engineering

Abstract

For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380nm to 190nm poly-pitches.