J. Faltermeier

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

Hikaru Kawasaki, V. Basker, T. Yamashita et al. · 2009 · 94 citations

Engineering, Vlsi Design, Sidewall Image Transfer +18

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Novel Integration Scheme, Engineering, Vlsi Design +21

Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance

Isaac Lauer, N. Loubet, S.D. Kim et al. · 2015 · 57 citations

Engineering, Finfet Technology, Silicon On Insulator +18

Sub-25nm FinFET with advanced fin formation and short channel effect engineering

Takashi Yamashita, V. Basker, T. Standaert et al. · Symposium on VLSI Technology · 2011 · 34 citations

Electrical Engineering, Advanced Fin Formation, Engineering +12

22 nm technology compatible fully functional 0.1 μm<sup>2</sup> 6T-SRAM cell

Bala S. Haran, A. Kumar, Lahir Shaik Adam et al. · 2008 · 32 citations

Functional 0.1, Nm Technology, Electrical Engineering +11