V. Basker

High performance 14nm SOI FinFET CMOS technology with 0.0174µm ² embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 129 citations

Engineering, Computer Engineering, Electrical Engineering +9

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

Hikaru Kawasaki, V. Basker, T. Yamashita et al. · 2009 · 94 citations

Engineering, Computer Engineering, Electrical Engineering +17

Channel doping impact on FinFETs for 22nm and beyond

C.-H. Lin, R. Kambhampati, Robert J. Miller et al. · 2012 · 67 citations

Engineering, Electrical Engineering, Electronic Materials +14

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +11

Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance

Isaac Lauer, N. Loubet, S.D. Kim et al. · 2015 · 59 citations

Engineering, Electrical Engineering, Microelectronics +16