The effective drive current in CMOS inverters

Mulun Na, E. Nowak, Wilfried Haensch, +1

Electrical EngineeringCmos Inverter DelayEngineeringEnergy Efficient DriveTiming Analysis +6

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai, +95

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried, +51

High-performance Soi TechnologyEngineeringVlsi DesignComputer ArchitectureInterconnect (Integrated Circuits) +14

A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications

Siddarth Krishnan, U. Kwon, N. Moumen, +59

Sige ChannelsLow Power ApplicationsEngineeringVlsi DesignIntegrated Circuits +14

Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs

K. Rim, M. Longstreet, A. Mocuta, +1

Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied Physics +7

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet, +34

Low-power ElectronicsDevice ModelingElectrical EngineeringUtbb StructureEngineering +13

A 3-Transistor DRAM Cell with Gated Diode for Enhanced Speed and Retention Time

W.K. Luk, J. Cai, R.H. Dennard, +2

Non-volatile MemoryElectrical EngineeringConventional 3TEngineeringNanoelectronics +9

Cold CMOS as a Power-Performance-Reliability Booster for Advanced FinFETs

Hung-Li Chiang, Tao Chen, J. F. Wang, +12

Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignComputer Engineering +8

Device design considerations for ultra-thin SOI MOSFETs

B. Doris, M. Ieong, Tinggang Zhu, +20

Utsoi DevicesElectrical EngineeringEngineeringOffset SpacerNanoelectronics +10

Impact of back bias on ultra-thin body and BOX (UTBB) devices

Q. Liu, F. Monsieur, Arvind Kumar, +39

V BbElectrical EngineeringBiomedical SensorsEngineeringBack Bias +11