K. Rim

Silicon Device Scaling to the Sub-10-nm Regime

M. Ieong, B. Doris, J. Kedzierski et al. · Science · 2004 · 573 citations

Engineering, Electrical Engineering, Materials Science +17

Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Massimo V. Fischetti, Zhibin Ren, P. M. Solomon et al. · Journal of Applied Physics · 2003 · 481 citations

Engineering, Materials Engineering, Materials Science +17

Ultrathin high-K gate stacks for advanced CMOS devices

E. P. Gusev, D. A. Buchanan, E. Cartier et al. · 2002 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi et al. · 2004 · 156 citations

Engineering, Electrical Engineering, Materials Science +17

Measurement of the effect of self-heating in strained-silicon MOSFETs

K.A. Jenkins, K. Rim · IEEE Electron Device Letters · 2002 · 151 citations

Engineering, Electrical Engineering, Materials Science +17