Concepedia

Massimo V. Fischetti

MV

Statistics

Publications

139

Citations

13.8K

H-Index

56

Active since

1979

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

The University of Texas at Dallas

IBM (United States)

University of Massachusetts Amherst

IMEC

Massimo V. Fischetti is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, semiconductor physics, and semiconductor devices.

ORCID

Publications per year

1979–2023

139

Publications

139

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

, , +17

Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects

Massimo V. Fischetti, Steven E. Laux · Physical review. B, Condensed matter · 1988 · 976 citations

, , +17

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 742 citations

, , +17

Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport

Massimo V. Fischetti · IEEE Transactions on Electron Devices · 1991 · 587 citations

, , +17

Monte Carlo study of electron transport in silicon inversion layers

Massimo V. Fischetti, S.E. Laux · Physical review. B, Condensed matter · 1993 · 510 citations

, , +17

1–5 of 139