Massimo V. Fischetti

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

Engineering, Sige Alloys, Silicon On Insulator +16

Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects

Massimo V. Fischetti, Steven E. Laux · Physical review. B, Condensed matter · 1988 · 969 citations

Device Modeling, Electrical Engineering, Engineering +14

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 735 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +20

Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport

Massimo V. Fischetti · IEEE Transactions on Electron Devices · 1991 · 582 citations

Engineering, Charge Transport, Semiconductor Nanostructures +20

Monte Carlo study of electron transport in silicon inversion layers

Massimo V. Fischetti, S.E. Laux · Physical review. B, Condensed matter · 1993 · 508 citations

Device Modeling, Quantum Science, Engineering +14