IEEE Transactions on Electron Devices

Venue (Journal)

Also Known As

Electron devices, Institute of Electrical and Electronics Engineers transactions on electron devices, Transactions on electron devices

32.5K

Publications

803.9K

Citations

1.3K

Concepts

About

IEEE Transactions on Electron Devices is a journal.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	267	14.7K	708K
2	Education	45	136	9.3K
3	Health Sciences	36	102	4.3K
4	Business	6	6	150
5	Humanities	1	1	12

IEEE Transactions on Electron Devices

32.5K

Publications

803.9K

Citations

Showing yearly statistics from 2000-2026.

Page 1

	Year	Citations
Large-signal analysis of a silicon Read diode oscillator D.L. Scharfetter, H.K. Gummel IEEE Transactions on Electron Devices EngineeringMeasurementEducationPower ElectronicsElectromagnetic Compatibility	1969	2.2K
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm Chenming Hu, Jeffrey Bokor, Tsu‐Jae King, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringGate LengthEngineeringTechnology Scaling	2000	1.6K
Double-Gate Tunnel FET With High- Gate Dielectric Kathy Boucart, Adrian Ionescu IEEE Transactions on Electron Devices	2007	1.6K
GaN-on-Si Power Technology: Devices and Applications Kevin J. Chen, Oliver D. Häberlen, Alex Lidow, IEEE Transactions on Electron Devices EngineeringPower DevicesGan-on-si Power ElectronicsPower ElectronicsNanoelectronics	2017	1.5K
On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration S. Takagi, Akira Toriumi, M. Iwase, IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1994	1.5K
Multiplication noise in uniform avalanche diodes R.J. McIntyre IEEE Transactions on Electron Devices Electrical EngineeringEngineeringInjected CarriersPhysicsElectronic Engineering	1966	1.4K
Electromigration&#8212;A brief survey and some recent results J. R. Black IEEE Transactions on Electron Devices	1969	1.4K
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R. Vetury, N.Q. Zhang, S. Keller, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductor DeviceVirtual Gate	2001	1.4K
A gas chromatographic air analyzer fabricated on a silicon wafer S.C. Terry, J.H. Jerman, James B. Angell IEEE Transactions on Electron Devices Chemical EngineeringAir SamplingEngineeringAnalytical InstrumentationGas Chromatography	1979	1.4K
A reliable approach to charge-pumping measurements in MOS transistors G. Groeseneken, H.E. Maes, N. Beltran, IEEE Transactions on Electron Devices Device ModelingTransistor ConfigurationsElectrical EngineeringCharge StateEngineering	1984	1.3K

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