S.E. Laux

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

Engineering, Sige Alloys, Silicon On Insulator +16

Monte Carlo study of electron transport in silicon inversion layers

Massimo V. Fischetti, S.E. Laux · Physical review. B, Condensed matter · 1993 · 508 citations

Device Modeling, Quantum Science, Engineering +14

Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure

S.E. Laux, D.J. Frank, Frank Stern · Surface Science · 1988 · 402 citations

Multilayer Heterostructures, Quasi-one-dimensional Electron States, Applied Physics +1

Techniques for small-signal analysis of semiconductor devices

S.E. Laux · IEEE Transactions on Electron Devices · 1985 · 227 citations

Device Modeling, Numerical Analysis, Electrical Engineering +15

Understanding hot-electron transport in silicon devices: Is there a shortcut?

Massimo V. Fischetti, S.E. Laux, E.F. Crabbé · Journal of Applied Physics · 1995 · 221 citations

Engineering, Carrier Multiplication, Integrated Circuits +19