S.E. Laux - Concepedia

Author

S.E. Laux

IBM Research - Thomas J. Watson Research Center

Also Known As

S. E. LAUX, S. E. Laux, S.E Laux, S.E. Laux, Stephan Laux

Publications

5.5K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)University of Tsukuba University of Illinois Urbana-Champaign University of Massachusetts Amherst

About

S.E. Laux is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	54	5K
2	Applied Physics	28	46	4.8K
3	Electrical Engineering	27	44	2.6K
4	Natural Sciences	10	10	847
5	Computer Engineering	7	7	456

S.E. Laux

Publications

5.4K

Citations

H-Index

Page 1

	Year	Citations
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys Massimo V. Fischetti, S.E. Laux Journal of Applied Physics EngineeringSige AlloysSilicon On InsulatorSemiconductor NanostructuresSemiconductors	1996	1.5K
Monte Carlo study of electron transport in silicon inversion layers Massimo V. Fischetti, S.E. Laux Physical review. B, Condensed matter Device ModelingQuantum ScienceEngineeringPhysicsNatural Sciences	1993	508
Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure S.E. Laux, D.J. Frank, Frank Stern Surface Science Multilayer HeterostructuresQuasi-one-dimensional Electron StatesApplied PhysicsPhysics	1988	402
Techniques for small-signal analysis of semiconductor devices S.E. Laux IEEE Transactions on Electron Devices Device ModelingNumerical AnalysisElectrical EngineeringSmall-signal AnalysisEngineering	1985	227
Understanding hot-electron transport in silicon devices: Is there a shortcut? Massimo V. Fischetti, S.E. Laux, E.F. Crabbé Journal of Applied Physics EngineeringCarrier MultiplicationIntegrated CircuitsSilicon On InsulatorCharge Transport	1995	221
Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model M. Ieong, P. M. Solomon, S.E. Laux, Device ModelingElectrical EngineeringSchottky Barrier HeightEngineeringTunneling Microscopy	2002	188
Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability Massimo V. Fischetti, S.E. Laux Journal of Applied Physics EngineeringHot-electron Energy DistributionElectron VelocitySilicon On InsulatorSemiconductor Device	2001	153
Effective barrier heights of mixed phase contacts: Size effects J. L. Freeouf, Thomas N. Jackson, S.E. Laux, Applied Physics Letters EngineeringEffective Barrier HeightsSemiconductor DeviceNanoelectronicsContact Mechanic	1982	136
Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K S.E. Laux, Massimo V. Fischetti IEEE Electron Device Letters Device ModelingSilicon Band StructureElectrical EngineeringDrain BiasesEngineering	1988	129
Capacitance Oscillations in One-Dimensional Electron Systems T. P. Smith, H. Arnot, Jongill Hong, Physical Review Letters Quantum ScienceElectrical EngineeringEngineeringPhysicsApplied Physics	1987	115

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