Zhibin Ren

Essential physics of carrier transport in nanoscale MOSFETs

Mark Lundstrom, Zhibin Ren · IEEE Transactions on Electron Devices · 2002 · 554 citations

Device Modeling, Electrical Engineering, Engineering +14

Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Massimo V. Fischetti, Zhibin Ren, P. M. Solomon et al. · Journal of Applied Physics · 2003 · 475 citations

Materials Science, Surface Characterization, Engineering +15

Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches

R. Venugopal, Zhibin Ren, Supriyo Datta et al. · Journal of Applied Physics · 2002 · 472 citations

Categoryquantum Electronics, Engineering, Device Hamiltonian +17

nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

Zhibin Ren, R. Venugopal, Sebastien Goasguen et al. · IEEE Transactions on Electron Devices · 2003 · 294 citations

Engineering, So-called Buttiker Probes, Double-gate Mosfets +17

On the performance limits for Si MOSFETs: a theoretical study

F. Assad, Zhibin Ren, Dragica Vasileska et al. · IEEE Transactions on Electron Devices · 2000 · 229 citations

Device Modeling, Electrical Engineering, Ballistic Transconductance +12