nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

TLDR

The paper presents nanoMOS, a program for numerically simulating quantum transport in double‑gate MOSFETs, and demonstrates its use on 10 nm devices. nanoMOS employs a Green’s‑function framework with Buttiker‑probe scattering, leverages the double‑gate geometry for an efficient mode‑space approach, and also implements ballistic Boltzmann and drift‑diffusion solvers for comparison. The mode‑space method dramatically reduces computational cost, making nanoMOS a practical design tool, and the authors showcase its application to 10 nm double‑gate MOSFETs.

Abstract

A program to numerically simulate quantum transport in double gate metal oxide semiconductor field effect transistors (MOSFETs) is described. The program uses a Green's function approach and a simple treatment of scattering based on the idea of so-called Buttiker probes. The double gate device geometry permits an efficient mode space approach that dramatically lowers the computational burden and permits use as a design tool. Also implemented for comparison are a ballistic solution of the Boltzmann transport equation and the drift-diffusion approaches. The program is described and some examples of the use of nanoMOS for 10 nm double gate MOSFETs are presented.