IEEE Transactions on Electron Devices · 2002 · 555 citations · 23 references
EngineeringElectrical EngineeringSemiconductor DevicesSemiconductor MaterialsTransport PhenomenaCarrier TransportDevice ModelingDevice SimulationNanoelectronicsSemiconductor PhysicsTransport PropertiesBallistic TransportCarrier DynamicsCarrier Transport MechanismsCarrier Transport ModelingEquilibriumNumerical Device SimulationNumerical SimulationQuantum Transport
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.
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Elementary scattering theory of the Si MOSFET
Mark Lundstrom · IEEE Electron Device Letters · 1997 · 585 citations