IEEE Electron Device Letters

Venue (Journal)

Also Known As

Electron device letters, Institute of Electrical and Electronics Engineers electron device letters, I.E.E.E. electron device letters

16.9K

Publications

438.9K

Citations

882

Concepts

About

IEEE Electron Device Letters is a journal.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	197	8.7K	399.6K
2	Natural Sciences	45	142	6.6K
3	Education	30	60	3.1K
4	Medicine	23	41	2K
5	Health Sciences	20	37	1.1K

IEEE Electron Device Letters

16.9K

Publications

438.9K

Citations

Showing yearly statistics from 2000-2026.

Page 1

	Year	Citations
High-performance heat sinking for VLSI David B. Tuckerman, R. F. W. Pease IEEE Electron Device Letters EngineeringVlsi DesignLiquid Metal CoolingComputer ArchitectureIntegrated Circuits	1981	5.1K
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec Woo Young Choi, Byung‐Gook Park, Jong Duk Lee, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringGate OxideEngineering	2007	1.9K
30-W/mm GaN HEMTs by Field Plate Optimization Yifeng Wu, A. Saxler, M. Moore, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringField PlatesRf Semiconductor	2004	1.1K
A Graphene Field-Effect Device Max C. Lemme, T. J. Echtermeyer, M. Baus, IEEE Electron Device Letters	2007	1.1K
Power semiconductor device figure of merit for high-frequency applications B. Jayant Baliga IEEE Electron Device Letters EngineeringPower DevicesEnergy EfficiencyBaliga High-frequency FigurePower Electronic Systems	1989	1K
Obtaining the specific contact resistance from transmission line model measurements G.K. Reeves, H.B. Harrison IEEE Electron Device Letters Electrical EngineeringEngineeringSpecific ResistanceResistorMeasurement	1982	1K
Stacked pentacene layer organic thin-film transistors with improved characteristics Y.-Y. Lin, David J. Gundlach, Shelby F. Nelson, IEEE Electron Device Letters Organic Charge-transfer CompoundElectrical EngineeringEngineeringSemiconducting PolymerFlexible Electronics	1997	925
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's S.-H. Lo, D. A. Buchanan, Yuan Taur, IEEE Electron Device Letters Device ModelingInversion LayerElectrical EngineeringQuantum-mechanical ModelingEngineering	1997	807
Pentacene organic thin-film transistors-molecular ordering and mobility David J. Gundlach, Y.-Y. Lin, Thomas N. Jackson, IEEE Electron Device Letters Materials SciencePentacene FilmsEngineeringSemiconducting PolymerOrganic Electronics	1997	768
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance F. Balestra, S. Cristoloveanu, M. Benachir, IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringNew DeviceNanoelectronics	1987	747

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