EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor PhysicsStrain EngineeringThin Film StrainMobility OptimizationSilicon Thin FilmsSilicon-on-insulator CmosSilicon-on-insulator ProcessingSilicon-on-insulator TechnologyStrain EffectsStrain Effects On Electronic PropertiesStrained Layer Structures
A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.