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Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs
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2004
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Materials EngineeringUltra-thin Strained SiElectrical EngineeringTensile-strained Si LayerEngineeringNanoelectronicsApplied PhysicsSemiconductor MaterialSemiconductor Device FabricationStrained Si ChannelSilicon On InsulatorMicroelectronicsStrained SiSemiconductor DeviceMobility Characteristics
A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and hole mobility enhancements were demonstrated on strained Si directly on insulator structures with no SiGe layer present under the strained Si channel.