N. Klymko

Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

K. Rim, K. Chan, L. Shi et al. · 2004 · 156 citations

Materials Engineering, Ultra-thin Strained Si, Electrical Engineering +12

A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding

F. Liu, R. Yu, Anthony Young et al. · 2008 · 118 citations

Engineering, Cu Beol, Interconnect (Integrated Circuits) +18

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

K. Cheng, A. Khakifirooz, N. Loubet et al. · 2012 · 74 citations

Challenges of nickel silicidation in CMOS technologies

N. Breil, C. Lavoie, Ahmet S. Özcan et al. · Microelectronic Engineering · 2014 · 51 citations

Materials Engineering, Chemical Engineering, Engineering +5

Oxygen induced adhesion degradation at metal/polyimide interface

Da‐Yuan Shih, N. Klymko, R. Flitsch et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 49 citations

Materials Science, Peel Strength, Peel Strengths +13