A. Khakifirooz

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

A. Khakifirooz, Osama M. Nayfeh, D.A. Antoniadis · IEEE Transactions on Electron Devices · 2009 · 250 citations

Device Modeling, Numerical Analysis, Electrical Engineering +12

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

D.A. Antoniadis, Ingvar Åberg, Cáit Ní Chléirigh et al. · IBM Journal of Research and Development · 2006 · 130 citations

Engineering, Vlsi Design, Semiconductor Device +18

MOSFET Performance Scaling—Part I: Historical Trends

A. Khakifirooz, D.A. Antoniadis · IEEE Transactions on Electron Devices · 2008 · 111 citations

Device Modeling, Electrical Engineering, Mosfet Performance Scaling +11

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2009 · 104 citations

Low-power Electronics, Electrical Engineering, Sige Rsd +12

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Semiconductor Technology, Electrical Engineering, Gate Length +15