Osama M. Nayfeh - Concepedia

Concepedia

Author

Osama M. Nayfeh

Massachusetts Institute of Technology ORCID

Also Known As

Nayfeh, Osama, Nayfeh, Osama M., O. M. Nayfeh, O.M. Nayfeh, OSAMA M. NAYFEH, Osama M. Nayfeh, Osama Nayfeh

57

Publications

1.2K

Citations

17

H-Index

48

Concepts

All Affiliations

Massachusetts Institute of Technology University of Illinois Urbana-Champaign DEVCOM Army Research Laboratory

OM

About

Osama M. Nayfeh is an author at Massachusetts Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	17	1.2K
2	Applied Physics	15	15	847
3	Electrical Engineering	13	13	1K
4	Materials Science	8	8	244
5	Chemistry	1	1	21

Osama M. Nayfeh

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17

Publications

1.2K

Citations

17

H-Index

	Year	Citations
Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions Osama M. Nayfeh, Cáit Ní Chléirigh, John Hennessy, IEEE Electron Device Letters SemiconductorsDevice ModelingElectrical EngineeringElectronic DevicesEngineering	2008	254
A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters A. Khakifirooz, Osama M. Nayfeh, D.A. Antoniadis IEEE Transactions on Electron Devices Device ModelingNumerical AnalysisElectrical EngineeringAll RegionsEngineering	2009	250
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations D.A. Antoniadis, Ingvar Åberg, Cáit Ní Chléirigh, IBM Journal of Research and Development EngineeringVlsi DesignSemiconductor DevicePhysical Design (Electronics)Nanoelectronics	2006	130
Strained-$\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior Osama M. Nayfeh, Judy L. Hoyt, D.A. Antoniadis IEEE Transactions on Electron Devices SemiconductorsSemiconductor TechnologyElectrical EngineeringSub XmlnsNonlocal Btbt Model	2009	83
Flexible supercapacitor sheets based on hybrid nanocomposite materials Qiang Liu, Osama M. Nayfeh, Munir H. Nayfeh, Nano Energy Materials ScienceSupercapacitorsEngineeringFlexible Supercapacitor SheetsFlexible Electronics	2012	82
Thin Film Silicon Nanoparticle UV Photodetector Osama M. Nayfeh, S. Venugopal Rao, Alexander D. Smith, IEEE Photonics Technology Letters Electrical EngineeringShort Wavelength OpticElectrochemical EtchingEngineeringPhotodetectors	2004	67
Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors Osama M. Nayfeh, Tim Marr, Madan Dubey IEEE Electron Device Letters SemiconductorsGraphene NanomeshesElectrical EngineeringElectronic DevicesEngineering	2011	51
UV Photodetectors With Thin-Film Si Nanoparticle Active Medium Munir H. Nayfeh, S. Venugopal Rao, Osama M. Nayfeh, IEEE Transactions on Nanotechnology Sensitive Uv DetectorElectrical EngineeringPhotoluminescenceEngineeringUv Photodetectors	2005	44
Memory effects in metal-oxide-semiconductor capacitors incorporating dispensed highly monodisperse 1nm silicon nanoparticles Osama M. Nayfeh, D.A. Antoniadis, Kevin Mantey, Applied Physics Letters Non-volatile MemoryEngineeringMemory EffectsEmerging Memory TechnologyPhase Change Memory	2007	38
Measurement of Enhanced Gate-Controlled Band-to-Band Tunneling in Highly Strained Silicon-Germanium Diodes Osama M. Nayfeh, CÁit NÍ ChlÉirighChleirigh, Judy L. Hoyt, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringQuantum–mechanical Btb	2008	33

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