Osama M. Nayfeh

Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions

Osama M. Nayfeh, Cáit Ní Chléirigh, John Hennessy et al. · IEEE Electron Device Letters · 2008 · 254 citations

Semiconductors, Device Modeling, Electrical Engineering +12

A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical Parameters

A. Khakifirooz, Osama M. Nayfeh, D.A. Antoniadis · IEEE Transactions on Electron Devices · 2009 · 250 citations

Device Modeling, Numerical Analysis, Electrical Engineering +12

Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations

D.A. Antoniadis, Ingvar Åberg, Cáit Ní Chléirigh et al. · IBM Journal of Research and Development · 2006 · 130 citations

Engineering, Vlsi Design, Semiconductor Device +18

Strained-$\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

Osama M. Nayfeh, Judy L. Hoyt, D.A. Antoniadis · IEEE Transactions on Electron Devices · 2009 · 83 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Flexible supercapacitor sheets based on hybrid nanocomposite materials

Qiang Liu, Osama M. Nayfeh, Munir H. Nayfeh et al. · Nano Energy · 2012 · 82 citations

Materials Science, Supercapacitors, Engineering +4