P. Kulkarni

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2009 · 104 citations

Low-power Electronics, Electrical Engineering, Sige Rsd +12

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 79 citations

Low-power Electronics, Device Modeling, Electrical Engineering +15

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Novel Integration Scheme, Engineering, Vlsi Design +21

UTBB FDSOI transistors with dual STI for a multi-V<inf>t</inf> strategy at 20nm node and below

L. Grenouillet, M. Vinet, J. Gimbert et al. · 2012 · 53 citations

Electrical Engineering, Utbb Fdsoi Transistors, Engineering +11

Impact of back bias on ultra-thin body and BOX (UTBB) devices

Q. Liu, F. Monsieur, Arvind Kumar et al. · 2011 · 45 citations

V Bb, Electrical Engineering, Biomedical Sensors +13