Hikaru Kawasaki

A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra et al. · 2002 · 101 citations

Engineering, Computer Engineering, Electrical Engineering +17

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

Hikaru Kawasaki, V. Basker, T. Yamashita et al. · 2009 · 94 citations

Engineering, Computer Engineering, Electrical Engineering +17

FinFET performance advantage at 22nm: An AC perspective

Michael Guillorn, Josephine Chang, A. Bryant et al. · 2008 · 83 citations

Engineering, Electrical Engineering, Microelectronics +15

Demonstration of highly scaled FinFET SRAM cells with high-κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond

Hikaru Kawasaki, Marwan Khater, Michael Guillorn et al. · 2008 · 61 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 0.063 µm<sup>2</sup> FinFET SRAM cell demonstration with conventional lithography using a novel integration scheme with aggressively scaled fin and gate pitch

V. Basker, T. Standaert, Hikaru Kawasaki et al. · 2010 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +11