Kangguo Cheng

Extremely thin SOI (ETSOI) CMOS with record low variability for low power system-on-chip applications

Kangguo Cheng, A. Khakifirooz, P. Kulkarni et al. · 2009 · 104 citations

Low-power Electronics, Electrical Engineering, Sige Rsd +12

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

Kwangyou Seo, Bala Haran, Divya Gupta et al. · 2014 · 97 citations

Engineering, Vlsi Design, Finfet Technology +18

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Semiconductor Technology, Electrical Engineering, Gate Length +15

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 79 citations

Low-power Electronics, Device Modeling, Electrical Engineering +15

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

Dechao Guo, G. Karve, Gen Tsutsui et al. · 2016 · 64 citations

Engineering, Vlsi Design, Device Integration +16