High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Abstract

We report, for the first time, high performance Ultra-thin Body and Box (UTBB) FDSOI devices with a gate length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> ) of 20nm and BOX thickness (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BOX</sub> ) of 25nm, featuring dual channel FETs (Si channel NFET and compressively strained SiGe channel PFET). Competitive effective current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> ) reaches 630μA/μm and 670μA/μm for NFET and PFET, respectively, at off current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ) of 100nA/μm and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dd</sub> of 0.9V. Excellent electrostatics is obtained, demonstrating the scalability of these devices to14nm and beyond. Very low A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Vt</sub> (1.3mV·μm) of channel SiGe (cSiGe) PFET devices is reported for the first time. BTI was improved >20% vs a comparable bulk device and evidence of continued scalability beyond 14nm is provided.