Toshiharu Nagumo

Statistical characterization of trap position, energy, amplitude and time constants by RTN measurement of multiple individual traps

Toshiharu Nagumo, Kiyoshi Takeuchi, Takashi Hase et al. · 2010 · 134 citations

Engineering, Physics, Instrumentation +12

New analysis methods for comprehensive understanding of Random Telegraph Noise

Toshiharu Nagumo, Kiyoshi Takeuchi, Shinji Yokogawa et al. · 2009 · 110 citations

Engineering, Electrical Engineering, Statistics +13

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +10

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

K. Cheng, A. Khakifirooz, N. Loubet et al. · 2012 · 74 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra-Thin Body SOI MOSFETs

Gen Tsutsui, M. Saitoh, Toshiharu Nagumo et al. · IEEE Transactions on Nanotechnology · 2005 · 61 citations

Engineering, Electrical Engineering, Materials Science +17