J. Gimbert

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Semiconductor Technology, Electrical Engineering, Gate Length +15

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

K. Cheng, A. Khakifirooz, N. Loubet et al. · 2012 · 74 citations

UTBB FDSOI transistors with dual STI for a multi-V<inf>t</inf> strategy at 20nm node and below

L. Grenouillet, M. Vinet, J. Gimbert et al. · 2012 · 53 citations

Electrical Engineering, Utbb Fdsoi Transistors, Engineering +11

Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS

A. Khakifirooz, Kangguo Cheng, Toshiharu Nagumo et al. · 2012 · 36 citations

Semiconductor Technology, Electrical Engineering, Engineering +14

UTBB FDSOI scaling enablers for the 10nm node

L. Grenouillet, Qinrang Liu, R. Wacquez et al. · 2013 · 29 citations

Engineering, Vlsi Design, Computer Architecture +19