2012 · 36 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationIntegrated Circuit DesignSemiconductor Device MaterialsStrain EngineeringStress-strain BehaviorThin Film StrainBias Stress EffectsDevice OptimizationGate Oxide Thickness EffectsSilicon-on-insulator TechnologyStrain EffectsStrain Effects On Electronic Properties
High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain, strained SOI (SSDOI) for NFET, and SiGe-on-insulator (SGOI) for PFET are examined. Significant performance boost is demonstrated with competitive drive currents of 1.65mA/µm and 1.25mA/µm, and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf> of 0.95mA/µm and 0.70mA/µm at I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> =100nA/µm and V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> of 1V, for NFET and PFET, respectively.