N. Loubet

0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

G. Avenier, Malick Diop, P. Chevalier et al. · IEEE Journal of Solid-State Circuits · 2009 · 139 citations

Engineering, Electrical Engineering, Microelectronics +13

FDSOI devices with thin BOX and ground plane integration for 32nm node and below

C. Fenouillet-Béranger, S. Denorme, P. Perreau et al. · Solid-State Electronics · 2009 · 133 citations

Engineering, Computer Engineering, Electrical Engineering +11

High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Qianlong Liu, M. Vinet, J. Gimbert et al. · 2013 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +10

Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond

Qijiong Liu, A. Yagishita, N. Loubet et al. · 2010 · 80 citations

Engineering, Electrical Engineering, Microelectronics +10

High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET

K. Cheng, A. Khakifirooz, N. Loubet et al. · 2012 · 74 citations

Engineering, Computer Engineering, Electrical Engineering +17