G. Avenier

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

G. Avenier, Malick Diop, P. Chevalier et al. · IEEE Journal of Solid-State Circuits · 2009 · 138 citations

Engineering, Sige Bicmos Technology, Education +18

SiGe BiCMOS Current Status and Future Trends in Europe

P. Chevalier, W. Liebl, H. Rücker et al. · 2018 · 77 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +12

A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz f<inf>MAX</inf>

P. Chevalier, F. Pourchon, Thomas Lacave et al. · 2009 · 58 citations

Electrical Characteristics, Technological Optimization Strategy, Electrical Engineering +12

0.13μm SiGe BiCMOS technology for mm-wave applications

G. Avenier, P. Chevalier, G. Troillard et al. · 2008 · 51 citations

Engineering, Sige Bicmos Technology, Education +16