A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

Abstract

This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> 6T-SRAM bit cell. High Speed (HS) HBT exhibits 320 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and 370 GHz f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> associated with a CML ring oscillator gate delay τ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> of 2.34 ps. Transmission lines, capacitors, high-Q varactors and inductors dedicated to millimeter-wave applications are also available.