C. Durand

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

A multi-wavelength 3D-compatible silicon photonics platform on 300mm SOI wafers for 25Gb/s applications

S. Crémer, Nathalie Vulliet, Thierry Pinguet et al. · 2013 · 95 citations

Engineering, Electrical Engineering, Optoelectronics +16

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

C. Durand, F. Casset, P. Renaux et al. · IEEE Electron Device Letters · 2008 · 51 citations · Full text

Engineering, Electrical Engineering, Mechanical Engineering +17

Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

Éric Colinet, C. Durand, Laurent Duraffourg et al. · IEEE Journal of Solid-State Circuits · 2009 · 35 citations · Full text

Engineering, Electrical Engineering, Microelectromechanical Systems +16

A Silicon Photonics Technology for 400 Gbit/s Applications

Antonio Fincato, Luca Maggi, J.F. Carpentier et al. · 2019 · 23 citations

Engineering, Electrical Engineering, Optoelectronics +16