G. Ribes

Review on high-k dielectrics reliability issues

G. Ribes, Jérôme Mitard, M. Denais et al. · IEEE Transactions on Device and Materials Reliability · 2005 · 519 citations

Dielectrics, Engineering, Semiconductor Device +16

On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's

M. Denais, A. Bravaix, V. Huard et al. · 2005 · 234 citations

Electrical Engineering, Ultra-tihin Gate, Engineering +12

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

Interface Trap Generation and Hole Trapping Under NBTI and PBTI in Advanced CMOS Technology With a 2-nm Gate Oxide

M. Denais, V. Huard, C. Parthasarathy et al. · IEEE Transactions on Device and Materials Reliability · 2004 · 122 citations

Electrical Engineering, Engineering, Advanced Cmos Technology +13

Evidence for hydrogen-related defects during NBTl stress in p-MOSFETs

V. Huard, F. Monsieur, G. Ribes et al. · 2003 · 75 citations

Engineering, Oxide Defects, Semiconductor Device +16