On-the-flycharacterization of NBTI in ultra-tihin gate oxide PMOSFET's

Concepts

EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor ReliabilityBias Temperature InstabilityCmos ReliabilityGate Oxide DegradationGate Oxide ReliabilityNegative Bias Temperature InstabilityReliability DegradationReliability Degradation MechanismsThreshold Voltage

Abstract

We propose a new methodology to characterize the negative bias temperature instability (NBTI) degradation without inherent recovery. The extracted parameters are the linear drain current, the threshold voltage and the transconductance. We compare the new and the usual methodologies and show a logarithmic time dependence of both the degradation and the recovery. The hole trapping (detrapping) is directly correlated to the V/sub T/ degradation (recovery), and plays the main role in the NBTI in ultra-thin gate-oxide PMOSFET's.

References

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Engineering, Electrical Engineering, Microelectronics +15

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Engineering, Electrical Engineering, Microelectronics +16