N. Derrier

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 173 citations

Engineering, Electrical Engineering, Microelectronics +15

0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

G. Avenier, Malick Diop, P. Chevalier et al. · IEEE Journal of Solid-State Circuits · 2009 · 139 citations

Engineering, Electrical Engineering, Microelectronics +13

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

P. Chevalier, Thomas Lacave, E. Canderle et al. · 2012 · 40 citations

Engineering, Electrical Engineering, Microelectronics +16

State-of-the-art and future perspectives in calibration and de-embedding techniques for characterization of advanced SiGe HBTs featuring sub-THz f<inf>T</inf>/f<inf>MAX</inf>

N. Derrier, Andrej Rumiantsev, D. Céli · 2012 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors

Andreas Pawlak, M. Schröter, J. Krause et al. · 2011 · 19 citations

Engineering, Electrical Engineering, Microelectronics +16