E. Canderle

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz

P. Chevalier, Thomas Lacave, E. Canderle et al. · 2012 · 40 citations

Electrical Engineering, Millimeter Wave Technology, Engineering +14

Nanoscale SiGe BiCMOS technologies: From 55 nm reality to 14 nm opportunities and challenges

P. Chevalier, G. Avenier, E. Canderle et al. · 2015 · 27 citations

Engineering, Vlsi Design, Device Integration +17

Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC

F. Gianesello, A. Monroy, V. Vialla et al. · 2016 · 23 citations

Rf Fems, Electrical Engineering, Engineering +13

PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications

P. Chevalier, F. Gianesello, Andrea Pallotta et al. · 2020 · 16 citations

Electrical Engineering, Engineering, Radio Frequency +10