A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

S. Jouan, R. Planche, H. Baudry, +15

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringHigh-speed Low 1/FRf SemiconductorHigh-frequency Device +9

High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

H. Baudry, B. Martinet, C. Fellous, +11

Semiconductor TechnologyElectrical EngineeringEngineeringHigh Performance 0.25Rf Semiconductor +11

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

P. Chevalier, B. Barbalat, M. Laurens, +12

Electrical CharacteristicsPhotonicsElectrical Engineering120-Nm StatusEngineering +12

BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

A. Monroy, W. Laurens, M. Marty, +6

Low-power ElectronicsGhz F/sub Max/Electrical EngineeringMillimeter Wave TechnologyEngineering +11

A high performance low complexity SiGe HBT for BiCMOS integration

A. Chantre, M. Marty, J.L. Regolini, +9

EngineeringVlsi DesignDevice IntegrationComputer ArchitectureCircuit System +14

Characteristics of SOI CMOS circuits made in n/n ⁺ /n oxidised porous silicon structures

K. Barla, G. Bomchil, R. Hérino, +2

Electronics Letters

Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures

Sébastien Pruvost, S. Delcourt, I. Telliez, +5

IEEE Electron Device Letters

Cryogenic TemperaturesEngineeringRadio FrequencyBicmos Sige HbtElectromagnetic Compatibility +15

Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC

F. Gianesello, A. Monroy, V. Vialla, +12

Rf FemsElectrical EngineeringEngineeringRf SemiconductorHigh-frequency Device +11

SOI technology using buried layers of oxidized porous Si

K. Barla, G. Bomchil, R. Hérino, +1

IEEE Circuits and Devices Magazine

Materials ScienceSemiconductor TechnologySoi TechnologyEngineeringCrystalline Defects +11

LDMOSFET and SiGe:C HBT integrated in a 0.25μm BiCMOS technology for RF-PA applications

D. Muller, Alexandre Giry, C. Amaud, +5

Electrical EngineeringSemiconductor DeviceEngineeringC HbtRf Semiconductor +10