A. Monroy

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

S. Jouan, R. Planche, H. Baudry et al. · IEEE Transactions on Electron Devices · 1999 · 55 citations

Electrical Engineering, Engineering, High-speed Low 1/F +11

High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

H. Baudry, B. Martinet, C. Fellous et al. · 2002 · 41 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

P. Chevalier, B. Barbalat, M. Laurens et al. · 2007 · 35 citations

Electrical Characteristics, Photonics, Electrical Engineering +14

BiCMOS6G: a high performance 0.35 μm SiGe BiCMOS technology for wireless applications

A. Monroy, W. Laurens, M. Marty et al. · 2003 · 28 citations

Low-power Electronics, Ghz F/sub Max/, Electrical Engineering +13

A high performance low complexity SiGe HBT for BiCMOS integration

A. Chantre, M. Marty, J.L. Regolini et al. · 2002 · 28 citations

Engineering, Vlsi Design, Device Integration +16