M. Laurens

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

S. Jouan, R. Planche, H. Baudry et al. · IEEE Transactions on Electron Devices · 1999 · 55 citations

Electrical Engineering, Engineering, High-speed Low 1/F +11

High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

H. Baudry, B. Martinet, C. Fellous et al. · 2002 · 41 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

P. Chevalier, C. Fellous, Laurent Rubaldo et al. · 2004 · 35 citations

Electrical Engineering, Bicmos Performance Objectives, Selective Epitaxial Base +13

High-Speed SiGe BiCMOS Technologies: 120-nm Status and End-of-Roadmap Challenges

P. Chevalier, B. Barbalat, M. Laurens et al. · 2007 · 35 citations

Electrical Characteristics, Photonics, Electrical Engineering +14

Refractive Index Variations for Argon, Nitrogen, and Carbon Dioxide at λ = 632.8 nm (He−Ne Laser Light) in the Range 288.15 K ≤ <i>T </i>≤ 323.15 K, 0 &lt; <i>p </i>&lt; 110 kPa

Yves Clergent, Christian Durou, M. Laurens · Journal of Chemical & Engineering Data · 1999 · 32 citations

Carbon Dioxide, Optical Materials, Engineering +28