Publication | Closed Access
230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
35
Citations
1
References
2004
Year
Unknown Venue
Electrical EngineeringBicmos Performance ObjectivesSelective Epitaxial BaseEngineeringPhysicsHigh-frequency DeviceMillimeter Wave TechnologyElectronic EngineeringRf SemiconductorApplied PhysicsIntegration ConstraintsComputer EngineeringMicroelectronicsMicrowave EngineeringElectromagnetic CompatibilityNm Bicmos Technology
This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.
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