C. Fellous

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications

P. Chevalier, C. Fellous, Laurent Rubaldo et al. · IEEE Journal of Solid-State Circuits · 2005 · 62 citations

Photonics, Electrical Engineering, Millimeter Wave Technology +13

High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

H. Baudry, B. Martinet, C. Fellous et al. · 2002 · 41 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology

P. Chevalier, C. Fellous, Laurent Rubaldo et al. · 2004 · 35 citations

Electrical Engineering, Bicmos Performance Objectives, Selective Epitaxial Base +13

Study of dynamical formation and shape of microlenses formed by the reflow method

Stéphanie Audran, B. Faure, B. Mortini et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 19 citations

Colloidal Material, Engineering, Microlenses Arrays +21

Thermal and chemical loading effects in non selective Si/SiGe epitaxy

C. Fellous, F. Romagna, D. Dutartre · Materials Science and Engineering B · 2002 · 15 citations

Materials Science, Materials Engineering, Electrical Engineering +10