H. Baudry

A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

S. Jouan, R. Planche, H. Baudry et al. · IEEE Transactions on Electron Devices · 1999 · 55 citations

Electrical Engineering, Engineering, High-speed Low 1/F +11

High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy

H. Baudry, B. Martinet, C. Fellous et al. · 2002 · 41 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

Screen Printing Piezoelectric Devices

H. Baudry · Hybrid Circuits · 1987 · 30 citations

Electrical Engineering, Engineering, Flexible Electronics +15

100GHz SiGe:C HBTs using non selective base epitaxy

B. Martinet, H. Baudry, O. Kermarrec et al. · 2001 · 15 citations

Electrical Engineering, Engineering, Rf Semiconductor +6

An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter

B. Martinet, F. Romagna, O. Kermarrec et al. · 2003 · 13 citations

Electrical Engineering, Engineering, Vlsi Design +11