2002 · 41 citations · 1 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesRadio-frequency Integrated CircuitsSemiconductor Device MaterialsBicmos TechnologyHigh PerformanceHigh-frequency ElectronicsMillimeter-wave Integrated CircuitsSige Bicmos DesignSilicon Germanium Bipolar Transistor
A robust 0.25 /spl mu/m double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90 GHz f/sub T//f/sub max/ with pure SiGe base in 0.25 /spl mu/m BiCMOS technology. Performances up to 120/100 GHz f/sub T//f/sub max/ are demonstrated for SiGe:C base transistors.
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