Y. Campidelli

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz f<inf>T</inf> / 370 GHz f<inf>MAX</inf> HBT and high-Q millimeter-wave passives

P. Chevalier, G. Avenier, G. Ribes et al. · 2014 · 171 citations

Low-power Electronics, Electrical Engineering, Millimeter Wave Technology +15

Transistor effect in monolithic Si/CoSi ₂ /Si epitaxial structures

E. Rosencher, S.L. Delage, Y. Campidelli et al. · Electronics Letters · 1984 · 140 citations

Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices

T. Akatsu, C. Deguet, Loïc Sanchez et al. · Materials Science in Semiconductor Processing · 2006 · 128 citations

Electronic Devices, Engineering, Electronic Engineering +5

Fabrication and structure of epitaxial Er silicide films on (111) Si

F. Arnaud d’Avitaya, A. Pério, J.C. Oberlin et al. · Applied Physics Letters · 1989 · 115 citations

Materials Science, Semiconductors, Er Silicide Films +13

Electroluminescence from strain-compensated Si0.2Ge0.8/Si quantum-cascade structures based on a bound-to-continuum transition

Laurent Diehl, S. Menteşe, E. Müller et al. · Applied Physics Letters · 2002 · 94 citations · Full text

Intersubband Electroluminescence, Engineering, Optoelectronic Devices +16