S.L. Delage

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

G.L. Patton, Subramanian S. Iyer, S.L. Delage et al. · IEEE Electron Device Letters · 1988 · 295 citations

Engineering, Electrical Engineering, Materials Science +17

Punch-through in short-channel AlGaN/GaN HFETs

Michael J. Uren, K. J. Nash, R.S. Balmer et al. · IEEE Transactions on Electron Devices · 2006 · 220 citations

Engineering, Electrical Engineering, Materials Science +15

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani et al. · Journal of Applied Physics · 2010 · 158 citations · Full text

Engineering, Materials Science, Physics +17

Transistor effect in monolithic Si/CoSi ₂ /Si epitaxial structures

E. Rosencher, S.L. Delage, Y. Campidelli et al. · Electronics Letters · 1984 · 140 citations

Engineering, Electrical Engineering, Materials Science +17

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Poisson et al. · IEEE Electron Device Letters · 2009 · 121 citations

Engineering, Electrical Engineering, Materials Science +17