N. Dyakonova - Concepedia

Author

N. Dyakonova

Centre National de la Recherche Scientifique

Also Known As

Dyakonova, N., Dyakonova, N.V., Dyakonova, Nina, N Dyakonova, N V Dyakonova, N. Dyakonova, N. V. D'yakonova, N. V. Dyakonova, N. V. D’yakonova, N.V D'yakonova

Publications

893

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université de Montpellier Physico-Technical Institute Laboratoire Charles Coulomb Ioffe Institute

About

N. Dyakonova is an author at Centre National de la Recherche Scientifique specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	555
2	Electrical Engineering	9	9	457
3	Applied Physics	8	8	542
4	Natural Sciences	2	2	135
5	Materials Science	1	1	124

N. Dyakonova

Publications

663

Citations

H-Index

Page 1

	Year	Citations
AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani, Journal of Applied Physics Wide-bandgap SemiconductorThz PhotonicsTerahertz TechnologyEngineeringDyakonov–shur Plasma	2010	157
Magnetospectroscopy of two-dimensional HgTe-based topological insulators around the critical thickness M. Zholudev, F. Teppe, M. Orlita, Physical Review B Critical ThicknessCharge ExcitationsEngineeringTopological MaterialsBismuth-based Superconductors	2012	124
Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors Y. M. Meziani, J. Łusakowski, W. Knap, Journal of Applied Physics SemiconductorsMagnetismElectrical EngineeringElectronic DevicesMagnetoresistance Characterization	2004	69
Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities N. Dyakonova, P. A. Ivanov, M. E. Levinshteĭn, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringKv DiodesEngineeringHigh Voltage Engineering	1999	64
Room temperature detection of sub-terahertz radiation in double-grating-gate transistors S. Nadar, F. Teppe, N. Dyakonova, Optics Express Room TemperatureElectrical EngineeringEngineeringPhysicsOptical Properties	2010	52
Ballistic and pocket limitations of mobility in nanometer Si metal-oxide semiconductor field-effect transistors J. Łusakowski, W. Knap, Y. M. Meziani, Applied Physics Letters EngineeringMagnetic ResonanceSilicon On InsulatorPocket LimitationsMagnetoresistance	2005	49
Electron mobility in quasi-ballistic Si MOSFETs J. Łusakowski, W. Knap, Y. M. Meziani, Solid-State Electronics Electrical EngineeringSemiconductor DeviceQuasi-ballistic Si MosfetsSilicon On Insulator	2006	26
Low-frequency noise in n-GaN N. Dyakonova, M. E. Levinshteĭn, Sylvie Contreras, Semiconductors	1998	25
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications W. Knap, M. I. Dyakonov, F. Teppe, arXiv (Cornell University)	2009	24
Terahertz response of InGaAs field effect transistors in quantizing magnetic fields O. A. Klimenko, Yu. A. Mityagin, H. Videlier, Applied Physics Letters Electrical EngineeringTransistor Thz PhotoresponseTerahertz SpectroscopyTerahertz ResponsePhysics	2010	16

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