N. Dyakonova

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

A. El Fatimy, N. Dyakonova, Yahya Moubarak Meziani et al. · Journal of Applied Physics · 2010 · 157 citations · Full text

Wide-bandgap Semiconductor, Thz Photonics, Terahertz Technology +16

Magnetospectroscopy of two-dimensional HgTe-based topological insulators around the critical thickness

M. Zholudev, F. Teppe, M. Orlita et al. · Physical Review B · 2012 · 124 citations

Critical Thickness, Charge Excitations, Engineering +23

Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

Y. M. Meziani, J. Łusakowski, W. Knap et al. · Journal of Applied Physics · 2004 · 69 citations · Full text

Semiconductors, Magnetism, Electrical Engineering +15

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

N. Dyakonova, P. A. Ivanov, M. E. Levinshteĭn et al. · IEEE Transactions on Electron Devices · 1999 · 64 citations

Semiconductor Technology, Electrical Engineering, Kv Diodes +13

Room temperature detection of sub-terahertz radiation in double-grating-gate transistors

S. Nadar, F. Teppe, N. Dyakonova et al. · Optics Express · 2010 · 52 citations · Full text

Room Temperature, Electrical Engineering, Engineering +11