Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors

Abstract

We report on the high-field (up to 10T) magnetoresistance measurements performed on the short (down to 75-nm gate length) n-type Si metal-oxide-semiconductor field-effect transistors. The electron magnetoresistance mobility of these nanometer devices was determined for a wide range of the electron concentration (107–1013cm−2, i.e., from a weak to a strong inversion) and gate length (10μm–75nm). In the case of long samples, the magnetoresistance mobility was compared to the effective mobility obtained by the standard parameter extraction and the split C–V techniques. The results are discussed in terms of the scattering power-law two-dimensional transport analysis. The data clearly indicate a significant decrease of the mobility with the gate length reduction below 100nm.