P. A. Ivanov

Recent developments in SiC single-crystal electronics

P. A. Ivanov, V. E. Chelnokov · Semiconductor Science and Technology · 1992 · 259 citations

Materials Engineering, Electrical Engineering, Engineering +9

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

N. Dyakonova, P. A. Ivanov, M. E. Levinshteĭn et al. · IEEE Transactions on Electron Devices · 1999 · 64 citations

Semiconductor Technology, Electrical Engineering, Kv Diodes +13

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures

S. L. Rumyantsev, M. S. Shur, M. E. Levinshteĭn et al. · Semiconductor Science and Technology · 2009 · 60 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Temperature dependence of the current gain in power 4H-SiC NPN BJTs

P. A. Ivanov, M. E. Levinshteĭn, Anant Agarwal et al. · IEEE Transactions on Electron Devices · 2006 · 43 citations

Electrical Engineering, Engineering, Physics +11

High hole lifetime (3.8 µs) in 4H-SiC diodeswith 5.5 kV blocking voltage

P. A. Ivanov, M. E. Levinshteĭn, K. G. Irvine et al. · Electronics Letters · 1999 · 40 citations