Wolfspeed, Inc. (United States)

Institution (Company)

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Also Known As

Cree, Wolfspeed, Inc., Wolfspeed, Inc. (United States)

772

Publications

88.5K

Citations

109

Authors

208

Concepts

About

Wolfspeed, Inc. (United States) is a company institution in Durham, United States known for engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	77	1.3K	75.5K
2	Management	2	4	232
3	Arts	1	1	16
4	Business	1	1	16
5	Education	1	1	16

Wolfspeed, Inc. (United States)

772

Publications

88.5K

Citations

Page 1

	Year	Citations
30-W/mm GaN HEMTs by Field Plate Optimization Yifeng Wu, A. Saxler, M. Moore, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringField PlatesRf Semiconductor	2004	1.1K
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide Gil Yong Chung, C. C. Tin, John R. Williams, IEEE Electron Device Letters Electrical EngineeringInversion Channel MobilityEngineeringNitric OxideBias Temperature Instability	2001	628
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates S.T. Sheppard, K. Doverspike, W.L. Pribble, IEEE Electron Device Letters Wide-bandgap SemiconductorRecord PerformanceElectrical EngineeringEngineeringRf Semiconductor	1999	535
Status and prospects for SiC power MOSFETs James A. Cooper, M. R. Melloch, Ranbir Singh, IEEE Transactions on Electron Devices Semiconductor TechnologyElectrical EngineeringEngineeringPower DeviceRapid Progress	2002	489
Silicon carbide high-power devices C.E. Weitzel, John W. Palmour, C.H. Carter, IEEE Transactions on Electron Devices Electrical EngineeringHigh Thermal ConductivityEngineeringPower DevicePower Devices	1996	435
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide R. F. Davis, G. Kelner, M. S. Shur, Proceedings of the IEEE EngineeringMonocrystalline AlphaSilicon CarbideOptoelectronic DevicesThin Film Process Technology	1991	404
Characterization, Modeling, and Application of 10-kV SiC MOSFET Jun Wang, Tiefu Zhao, Jun Li, IEEE Transactions on Electron Devices Sic MosfetElectrical EngineeringEngineeringHigh Voltage EngineeringPower Device	2008	382
SiC power-switching devices-the second electronics revolution? James A. Cooper, Anant Agarwal Proceedings of the IEEE Electrical EngineeringSic DevicesEngineeringBipolar Junction TransistorPower Devices	2002	381
40-W/mm Double Field-plated GaN HEMTs Yifeng Wu, M. Moore, A. Saxler, Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	2006	337
Cray T3D: a new dimension for Cray Research Roland Kessler, James L. Schwarzmeier Cray T3dEngineeringGeometryComputer Architecture3D Modeling	2002	300

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