Mrinal K. Das

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 628 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +9

10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

Mrinal K. Das, Craig Capell, David Grider et al. · 2011 · 221 citations

Electrical Engineering, Engineering, Majority Carrier Domain +14

N<sub>2</sub>O Processing Improves the 4H-SiC:SiO<sub>2</sub> Interface

Lori A. Lipkin, Mrinal K. Das, John W. Palmour · Materials science forum · 2002 · 176 citations

Engineering, Computer Engineering, Computer Architecture +2

SiC Power Devices for Microgrids

Qingchun Zhang, Robert Callanan, Mrinal K. Das et al. · IEEE Transactions on Power Electronics · 2010 · 174 citations

Electrical Engineering, Engineering, Dc Microgrids +12

Transition layers at the SiO2∕SiC interface

Tsvetanka Zheleva, Aivars J. Lelis, Gerd Duscher et al. · Applied Physics Letters · 2008 · 152 citations

Engineering, Electrical Performance, Silicon On Insulator +17