Mrinal K. Das

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

Mrinal K. Das, Craig Capell, David Grider et al. · 2011 · 224 citations

Engineering, Electrical Engineering, Microelectronics +16

N<sub>2</sub>O Processing Improves the 4H-SiC:SiO<sub>2</sub> Interface

Lori A. Lipkin, Mrinal K. Das, John W. Palmour · Materials science forum · 2002 · 176 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +5

SiC Power Devices for Microgrids

Qingchun Zhang, Robert Callanan, Mrinal K. Das et al. · IEEE Transactions on Power Electronics · 2010 · 175 citations

Engineering, Electrical Engineering, Materials Science +17

Transition layers at the SiO2∕SiC interface

Tsvetanka Zheleva, Aivars J. Lelis, Gerd Duscher et al. · Applied Physics Letters · 2008 · 154 citations

Engineering, Materials Engineering, Materials Science +17