Mrinal K. Das - Concepedia

Author

Mrinal K. Das

Wolfspeed, Inc. (United States)ORCID

Also Known As

Das, M.K., Das, Mrinal, Das, Mrinal K., Das, Mrinal Kanti, Das,M K, M Das, M K Das, M. Das, M. K. DAS, M. K. Das

316

Publications

5.6K

Citations

H-Index

105

Concepts

All Affiliations

Wolfspeed, Inc. (United States)Cree (China)Indian Institute of Science Education and Research, Bhopal North Carolina State University Jadavpur University

About

Mrinal K. Das is an author at Wolfspeed, Inc. (United States) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	36	92	4.3K
2	Natural Sciences	11	12	411
3	Medicine	4	4	227
4	Health Sciences	1	1	45
5	Management	1	1	16

Mrinal K. Das

118

Publications

Citations

H-Index

Page 1

	Year	Citations
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide Gil Yong Chung, C. C. Tin, John R. Williams, IEEE Electron Device Letters Electrical EngineeringInversion Channel MobilityEngineeringNitric OxideBias Temperature Instability	2001	628
10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications Mrinal K. Das, Craig Capell, David Grider, Electrical EngineeringEngineeringMajority Carrier DomainHigh Voltage EngineeringPower Device	2011	221
N<sub>2</sub>O Processing Improves the 4H-SiC:SiO<sub>2</sub> Interface Lori A. Lipkin, Mrinal K. Das, John W. Palmour Materials science forum EngineeringComputer EngineeringComputer ArchitectureSemiconductor Device FabricationO Processing	2002	176
SiC Power Devices for Microgrids Qingchun Zhang, Robert Callanan, Mrinal K. Das, IEEE Transactions on Power Electronics Electrical EngineeringEngineeringDc MicrogridsPower DevicePower Devices	2010	174
Transition layers at the SiO2∕SiC interface Tsvetanka Zheleva, Aivars J. Lelis, Gerd Duscher, Applied Physics Letters EngineeringElectrical PerformanceSilicon On InsulatorSemiconductor DeviceSemiconductors	2008	152
10 kV/120 A SiC DMOSFET half H-bridge power modules for 1 MVA solid state power substation David Grider, Mrinal K. Das, Anant Agarwal, Electrical EngineeringSic Power TechnologyEngineeringHigh Voltage EngineeringPower Devices	2011	111
Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT Gangyao Wang, Fei Wang, Gari Magai, Sic MosfetElectrical EngineeringSemiconductor DeviceEngineeringPower Device	2013	110
The fast neutron response of 4H silicon carbide semiconductor radiation detectors F.H. Ruddy, A.R. Dulloo, J.G. Seidel, IEEE Transactions on Nuclear Science Fusion Neutron FieldsRadiation DetectionPhysicsEnergy ResponsesEngineering	2006	94
Recent progress in SiC DMOSFETs and JBS diodes at Cree Robert Callanan, Anant Agarwal, Albert A. Burk, EngineeringPower DevicesKv Sic DmosfetsPower Electronic SystemsPower Electronics	2008	94
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce V<sub>f</sub> Drift in SiC Bipolar Power Devices Joseph J. Sumakeris, Peder Bergman, Mrinal K. Das, Materials science forum EngineeringSemiconductor DeviceNanoelectronicsElectronic PackagingPower Electronic Devices	2006	90

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