C. C. Tin

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 628 citations

Electrical Engineering, Inversion Channel Mobility, Engineering +9

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 429 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Lasing in whispering gallery mode in ZnO nanonails

D. Wang, Hye-Won Seo, C. C. Tin et al. · Journal of Applied Physics · 2006 · 114 citations

Materials Science, Photonics, Optical Pumping +12

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Ravi Kumar Chanana, K. McDonald, Massimiliano Di Ventra et al. · Applied Physics Letters · 2000 · 104 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC

K. McDonald, Robert A. Weller, Sokrates T. Pantelides et al. · Journal of Applied Physics · 2003 · 99 citations

Materials Science, Semiconductors, Electrical Engineering +14