K. McDonald

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 434 citations

Engineering, Materials Engineering, Materials Science +17

Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface

Chao‐Yang Lu, James A. Cooper, Takashi Tsuji et al. · IEEE Transactions on Electron Devices · 2003 · 150 citations

Engineering, Electrical Engineering, Materials Science +17

Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures

Ravi Kumar Chanana, K. McDonald, Massimiliano Di Ventra et al. · Applied Physics Letters · 2000 · 104 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC

K. McDonald, Robert A. Weller, Sokrates T. Pantelides et al. · Journal of Applied Physics · 2003 · 99 citations

Engineering, Materials Engineering, Materials Science +17