IEEE Electron Device Letters · 2001 · 633 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationInterface EngineeringOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsCapacitance-voltage CharacteristicsConductanceConduction BandInterface StatesInterface Trap DensityInterface Trap StatesNitric OxidePassivation
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2/spl times/10/sup 13/ to 2/spl times/10/sup 12/ eV/sup -1/ cm/sup -2/ following anneals in nitric oxide at 1175/spl deg/C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm/sup 2//V-s following the passivation anneals.
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Intrinsic SiC/SiO2 Interface States
V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 643 citations