O. W. Holland

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

Optical and structural properties of epitaxial MgxZn1−xO alloys

A. K. Sharma, J. Narayan, John F. Muth et al. · Applied Physics Letters · 1999 · 390 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ion beams in silicon processing and characterization

Eric Chason, S. T. Picraux, J. M. Poate et al. · Journal of Applied Physics · 1997 · 276 citations

Engineering, Materials Engineering, Materials Science +15

Ion implantation damage and annealing in germanium

O. W. Holland, B. R. Appleton, J. Narayan · Journal of Applied Physics · 1983 · 134 citations

Natural Sciences, Materials Engineering, Materials Science +17

Efficient production of silicon-on-insulator films by co-implantation of He+ with H+

Aditya Agarwal, T. E. Haynes, V. C. Venezia et al. · Applied Physics Letters · 1998 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +15